Spin Polarization Efficiency in a Diluted Magnetic Nano-Semiconductor Quantum Well System
نویسندگان
چکیده
منابع مشابه
Exciton spin polarization in magnetic semiconductor quantum wires
Electron-beam lithography and wet etching techniques are used to laterally pattern ZnSe/ ~Zn,Cd,Mn!Se single quantum wells into magnetically active quantum wires with widths ranging from 20 to 80 nm. Photoluminescence spectroscopy as a function of wire width reveals a competition between elastic strain relaxation and quantum confinement. Magnetophotoluminescence measurements at low temperatures...
متن کاملDecoherence-assisted initialization of a resident hole spin polarization in a p-doped semiconductor quantum well
M. Kugler,1 K. Korzekwa,2 P. Machnikowski,2,* C. Gradl,1 S. Furthmeier,1 M. Griesbeck,1 M. Hirmer,1 D. Schuh,1 W. Wegscheider,3 T. Kuhn,4 C. Schüller,1 and T. Korn1,† 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany 2Institute of Physics, Wrocław University of Technology, PL-50-370 Wrocław, Poland 3Solid State Physics Laboratory, ETH Zurich...
متن کاملElectron Spin Relaxation in a Semiconductor Quantum Well
A fully microscopic theory of electron spin relaxation by the D’yakonov-Perel’ type spin-orbit coupling is developed for a semiconductor quantum well in an ambient magnetic field applied perpendicular to the plane of the well. We derive Bloch equations for an electron spin in the well and determine explicit microscopic expressions for the spin relaxation times. The dependencies of the electron ...
متن کاملSpin filtering and spin separation in diluted magnetic semiconductor hybrid systems
We demonstrate spin-dependent tunneling features of electronic transport in diluted magnetic semiconductor/semiconductor hybrid systems. It is shown that the geometrical asymmetry of the multilayer heterostructure results in the asymmetry of the spin polarization on the external electric field. The degree of the asymmetry can be changed by adjusting the structural configuration and the magnitud...
متن کاملAbout Ge(Mn) diluted magnetic semiconductor
Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic properties of this solution. These measurements, combined with secondary ion mass spectrometry, atomic force microscopy, and Auger electron spectroscop...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Nanoscience and Technology
سال: 2018
ISSN: 2455-0191
DOI: 10.30799/jnst.sp209.18040209